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| 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 m (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 20 -18 -72 125 937 -18 12.5 150 -55 to150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (typ.) Circuit Configuration 4 Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Rth (ch-c) Max 1.0 Unit C/W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = -50 V, Tch = 25C (initial), L = 3.56 mH, RG = 25 W, IAR = -18 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 2002-09-11 2SJ620 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton tf 0V VGS -10 V 4.7 W ID = -9 A RL = 5.55 W VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -9 A VGS = -10 V, ID = -9 A VDS = -10 V, ID = -6 A Min 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 85 63 15 2900 480 1000 25 45 25 Max 10 Unit mA mA V V mW S -100 3/4 -100 -0.8 3/4 3/4 7 3/4 3/4 3/4 3/4 VOUT 3/4 3/4 -2.0 120 90 3/4 3/4 3/4 3/4 3/4 3/4 3/4 pF ns Turn-OFF time toff Duty < 1%, tw = 10 ms = VDD ~ -50 V - 3/4 170 3/4 Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge Qg Qgs Qgd VDD ~ -80 V, VGS = -10 V, ID = -18 A - 3/4 3/4 3/4 140 90 50 3/4 3/4 3/4 nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = -18 A, VGS = 0 V IDR = -18 A, VGS = 0 V, dIDR/dt = 50 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 220 0.97 Max -18 -72 1.7 3/4 3/4 Unit A A V ms mC Marking Lot Number J620 Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-09-11 2SJ620 ID - VDS -20 Common source Tc = 25C pulse test -50 -8 -6 -10 -4.5 -4 -40 -10 -8 -6 -5 -4.5 ID - VDS Common source Tc = 25C pulse test -16 (A) (A) -3.5 ID -12 ID -4 -30 -3.5 Drain current -8 Drain current -3 -20 -4 -2.5 -3 -10 VGS = -2.5 V VGS = -2 V 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 0 0 -4 -8 -12 -16 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -20 Common source VDS = -10 V pulse test -3.0 VDS - VGS Common source Tc = 25C pulse test -16 (A) VDS Drain-source voltage -12 (V) -2.5 Drain current ID -2.0 -1.5 ID = -18 A -1.0 -9 -4.5 -8 25 -4 100 Tc = -55C -0.5 0 0 -1 -2 -3 -4 -5 0 0 -2 -4 -6 -8 -10 -12 -14 -16 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 100 0.3 Common source VDS = -10 V Common source Tc = 25C Pulse test RDS (ON) - ID iYfsi (S) 50 30 Forward transfer admittance (W) Tc = -55C 25 Drain-source on resistance pulse test 0.1 VGS = -4 V -10 100 10 RDS (ON) 0.03 0.01 -1 5 3 2 -1 -3 -5 -10 -30 -50 -100 -3 -10 -30 -100 Drain current ID (A) Drain current ID (A) 3 2002-09-11 2SJ620 RDS (ON) - Tc (W) 0.20 Common source pulse test 0.15 -100 -50 -30 -10 -5 -3 IDR - VDS Common source Tc = 25C pulse test -10 RDS (ON) Drain reverse current IDR (A) Drain-source on resistance -5 0.10 VGS = -4 V 0.05 VGS = -10 V -4.5 ID = -18 A -9 -1.0 -1 VGS = 0, 1 V -0.5 0 -80 -40 0 40 80 120 160 -0.3 0 0.4 0.8 1.2 1.6 2.0 2.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 50000 30000 -4 Vth - Tc Common source VDS = -10 V ID = -1 mA pulse test Gate threshold voltage Vth (V) (pF) 10000 5000 3000 Ciss -3 Capacitance C -2 1000 500 Common source 300 VGS = 0 V f = 1 MHz Tc = 25C 100 -0.1 -0.3 -1 Coss -1 Crss -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 200 -200 Dynamic input/output characteristics Common source ID = -18 A Tc = 25C pulse test -16 (W) (V) Drain power dissipation VDS Drain-source voltage 100 -80 VDS -20 -40 -40 VDD = -80 V -8 50 -4 0 0 40 80 120 160 0 0 40 80 120 160 0 200 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-09-11 Gate-source voltage VGS PD 150 -120 VGS -12 (V) 2SJ620 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 3 1 Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 m 100 m 1m 10m 100m Single pulse PDM t T Duty = t/T Rth (ch-c) = 1.0C/W 1 10 Pulse width tw (S) Safe operating area -1000 1000 EAS - Tch (mJ) Avalanche energy EAS 100 ms * 1 ms * 800 -100 ID max (pulsed) * (A) 600 ID max (continuous) -10 DC operation Tc = 25C ID Drain current 400 -1 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. -1 -10 200 -0.1 -0.1 VDSS max -100 -1000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD Test circuit Wave form AS = ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e VDS RG = 25 W VDD = -50 V, L = 3.56 mH 5 2002-09-11 2SJ620 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-09-11 |
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